Oxide thin-film transistors (TFTs), including
indium-
gallium-
zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of
oxide semiconductors in electronic products, an effective doping method that can control the electrical characteristics of
oxide TFTs is required. Here, we comprehensively investigate the effect of
silane-based self-assembled monolayer (SAM) doping on IGZO TFTs. Instead of a complex doping process, the electrical performance can be enhanced by anchoring
silane-based
SAMs on the IGZO surface. Furthermore, differences in the doping effect based on the structure of
SAMs were analyzed; the analysis offers a systematic guideline for effective electrical characteristic control in IGZO TFTs.