A highly conducting graphene film with dual-side molecular n-doping.

Abstract

Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as -1.7 × 10(13) cm(-2), and the sheet resistance is as low as ∼86 ± 39 Ω sq(-1), which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices.

• Authors: Youngsoo Kim, Jaesung Park, Junmo Kang, Je Min Yoo, Kyoungjun Choi, Eun Sun Kim, Jae-Boong Choi, Chanyong Hwang, K S Novoselov, Byung Hee Hong
• Journal: Nanoscale (Nanoscale) Vol. 6 Issue 16 Pg. 9545-9 (Aug 21 2014) ISSN: 2040-3372 [Electronic] England
• PMID: 24993121 (Publication Type: Journal Article, Research Support, Non-U.S. Gov't)