Low-loss semiconductor waveguide bends.

Abstract

An experimental comparison is made between the losses of waveguide bends in disorder-delineated waveguides in semiconductor superlattices composed of GaAs and AlAs layers for simple abrupt bends and abrupt bends with an additional half-angle guiding wall proposed by Shiina et al. [Opt. Lett. 11, 736 (1986)]. For light above the band gap of bulk GaAs, the abrupt and Shiina bends were found to have to 3-dB loss angles of 3 and 7 deg, respectively. This improved performance suggests that the specific geometry of the bends is yet another degree of freedom in designing guiding structure for planar routing.

• Authors: P D Swanson, F Julien, M A Emanuel, L Sloan, T Tang, T A Detemple, J J Coleman
• Journal: Optics letters (Opt Lett) Vol. 13 Issue 3 Pg. 245-7 (Mar 01 1988) ISSN: 0146-9592 [Print] United States
• PMID: 19742042 (Publication Type: Journal Article)