hafnium oxide

12/01/2020 - "So far, intratumoral hafnium oxide nanoparticles were safe and improved efficacy in locally advanced sarcoma."
01/01/2019 - "This phase 2-3 trial evaluated the safety and efficacy of the hafnium oxide (HfO2) nanoparticle NBTXR3 activated by radiotherapy versus radiotherapy alone as a pre-operative treatment in patients with locally advanced soft-tissue sarcoma. "
12/01/2019 - "[Doubling complete histological response in sarcomas with radiation therapy using nanoparticles (Hafnium oxide, NBTXR3), a phase III trial]."
02/15/2017 - "Purpose: This phase I study aimed to determine the recommended dose (RD), safety profile, and feasibility of a procedure combining intratumoral injection of hafnium oxide nanoparticles (NBTXR3; a radioenhancer) and external beam radiotherapy (EBRT) for preoperative treatment of adults with locally advanced soft tissue sarcoma (STS).Experimental Design: Patients had a preoperative indication of EBRT for STS of the extremity or trunk. "
01/01/2019 - "NBTXR3, a first-in-class radioenhancer hafnium oxide nanoparticle, plus radiotherapy versus radiotherapy alone in patients with locally advanced soft-tissue sarcoma (Act.In"

09/01/2012 - "In this study, hafnium oxide nanoparticles were designed that concentrate in tumor cells to achieve intracellular high-energy dose deposit. "
01/01/2020 - "Hafnium oxide nanoparticles (NBTXR3) have been designed to increase energy dose deposit within cancer cells. "
06/30/2014 - "Hafnium oxide, NBTXR3 nanoparticles were designed for high dose energy deposition within cancer cells when exposed to ionizing radiation. "
01/01/2014 - "These nanoparticles, such as hafnium oxide engineered as 50 nm-sized spheres, functionalized with a negative surface (NBTXR3 nanoparticles), have been developed as selective radioenhancers, which represents a breakthrough approach for the local treatment of solid tumors. "
01/01/2020 - "Hafnium Oxide (HfO2) based nanoagent has been used in clinical trials for radiosensitized tumor therapy. "

09/08/2014 - "Using non-linear global optimization methods, optimized hafnium oxide (HfO2)-filled ARC 2D Tantalum (Ta) PhC designs exhibiting up to 26% improvement in emittance/absorptance at wavelengths λ below a cutoff wavelength λc over the unfilled 2D TaPhCs are demonstrated. "

04/13/2023 - "The wake-up and fatigue effects exhibited by ferroelectric hafnium oxide (HfO2) during electrical cycling are two of the most significant obstacles limiting its development and application. "
06/10/2020 - "These results provide insight into the role of electrodes in the performance of hafnium oxide-based ferroelectrics and mechanisms driving wake-up and fatigue, and demonstrate a non-destructive means to characterize the phase changes accompanying polarization instabilities."
02/01/2017 - "Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. "
02/01/2017 - "Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition."

02/17/2009 - "In order to study and control the surface properties of hafnium oxide, self-assembled monolayers (SAMs) of four different long aliphatic molecules with binding groups of phosphonic acid, carboxylic acid, and catechol were formed and characterized. "
02/01/2010 - "In this paper, we report on n-alkyl phosphonic acid (PA) self-assembled monolayer (SAM)/hafnium oxide (HfO(2)) hybrid dielectrics utilizing the advantages of SAMs for control over the dielectric/semiconductor interface with those of high-k metal oxides for low-voltage organic thin film transistors (OTFTs). "
11/07/2012 - "Multifunctional SAMs on ultrathin metal oxides, such as hafnium oxide and aluminum oxide, are shown to enable (1) low-voltage (sub 2 V) OFETs through dielectric and interface engineering on rigid and plastic substrates, (2) simultaneous one-component modification of source-drain and dielectric surfaces in bottom-contact OFETs, and (3) SAM-FETs based on molecular monolayer semiconductors. "