Abstract |
Resistive switching behavior of Au nanodot-embedded Nb2O5 memristor devices is reported. Due to controlled formation and/or rupture of conductive filaments; Au nanodot-embedded Nb2O5 devices show better consistency during transition from high to low resistance state and vice-versa. The memristive transition is explained using a physical model which involves oxygen ion, O(2-) trapping or detrapping at the metal- oxide interface, and O(2-) transport and annihilation with the oxygen vacancies in the breakdown percolation path. The experimental results indicate that Au nanodot-embedded Nb2O5 memristors may find applications as non-volatile memory devices.
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Authors | M K Hota, M K Bera, M K Bera |
Journal | Journal of nanoscience and nanotechnology
(J Nanosci Nanotechnol)
Vol. 14
Issue 5
Pg. 3538-44
(May 2014)
ISSN: 1533-4880 [Print] United States |
PMID | 24734584
(Publication Type: Journal Article)
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