A facile route for producing single-crystalline epitaxial perovskite oxide thin films.

Abstract

We report how a low vacuum pressure process followed by a few-minute annealing enables epitaxial stabilization, producing high-quality, phase-pure, single-crystalline epitaxial, and misfit dislocation-free BiFeO3(001) thin films on SrTiO3(001) at ∼450 °C less than current routes. These results unambiguously challenge the widely held notion that atomic layer deposition (ALD) is not appropriate for attaining high-quality chemically complex oxide films on perovskite substrates in single-crystalline epitaxial form, demonstrating applicability as an inexpensive, facile, and highly scalable route.

• Authors: Andrew R Akbashev, Guannan Chen, Jonathan E Spanier
• Journal: Nano letters (Nano Lett) Vol. 14 Issue 1 Pg. 44-9 (Jan 08 2014) ISSN: 1530-6992 [Electronic] United States
• PMID: 24063419 (Publication Type: Journal Article, Research Support, Non-U.S. Gov't, Research Support, U.S. Gov't, Non-P.H.S.)