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Spatial distribution of dislocations in relation to a substructure in high-quality GaN film.

Abstract
The dislocation distribution of high-quality single-crystal gallium nitride (GaN) films grown by the hybrid vapor phase epitaxy was analyzed. This study examined the domain structure of GaN from the dislocation distribution on the macroscale by optical microscopy. The surface structure of GaN consisted of domains with microcolumns as the substructure. The inner domains contained a lower density of dislocations but a large number of these dislocations were observed along the domain boundaries. The existence of a domain boundary structure doubly increased the total dislocation density.
AuthorsMino Yang, Chong-Don Kim, Hee-Goo Kim, Cheol-Woong Yang
JournalMicroscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada (Microsc Microanal) Vol. 19 Suppl 5 Pg. 127-30 (Aug 2013) ISSN: 1435-8115 [Electronic] England
PMID23920190 (Publication Type: Journal Article, Research Support, Non-U.S. Gov't)

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