Abstract |
Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers ( SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.
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Authors | Hongtao Zhang, Xuefeng Guo, Jingshu Hui, Shuxin Hu, Wei Xu, Daoben Zhu |
Journal | Nano letters
(Nano Lett)
Vol. 11
Issue 11
Pg. 4939-46
(Nov 09 2011)
ISSN: 1530-6992 [Electronic] United States |
PMID | 22011136
(Publication Type: Journal Article, Research Support, Non-U.S. Gov't)
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Chemical References |
- Membranes, Artificial
- Organic Chemicals
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Topics |
- Electrodes
- Equipment Design
- Equipment Failure Analysis
- Membranes, Artificial
- Nanotechnology
(instrumentation)
- Organic Chemicals
(chemistry)
- Semiconductors
- Transistors, Electronic
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