A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube.

Abstract

We demonstrate a field-effect nonvolatile memory device made of a ferroelectric copolymer gate nanodot and a single-walled carbon nanotube (SW-CNT). A position-controlled dip-pen nanolithography was performed to deposit a poly(vinylidene fluoride-ran-trifluoroethylene) (PVDF-TrFE) nanodot onto the SW-CNT channel with both a source and drain for field-effect transistor (FET) function. PVDF-TrFE was chosen as a gate dielectric nanodot in order to efficiently exploit its bipolar chemical nature. A piezoelectric force microscopy study confirmed the canonical ferroelectric responses of the PVDF-TrFE nanodot fabricated at the center of the SW-CNT channel. The two distinct ferroelectric polarization states with the stable current retention and fatigue-resistant characteristics make the present PVDF-TrFE-based FET suitable for nonvolatile memory applications.

• Authors: Jong Yeog Son, Sangwoo Ryu, Yoon-Cheol Park, Yun-Tak Lim, Yun-Sok Shin, Young-Han Shin, Hyun Myung Jang
• Journal: ACS nano (ACS Nano) Vol. 4 Issue 12 Pg. 7315-20 (Dec 28 2010) ISSN: 1936-086X [Electronic] United States
• PMID: 21050014 (Publication Type: Journal Article, Research Support, Non-U.S. Gov't)