iBond

03/01/2008 - "SE Bond was more efficient in removing the smear layer than iBond. "
05/01/2005 - "iBond did not completely etch through the enamel smear layer. "
04/01/2005 - "Fluid flow measurements of iBond were conducted using the two application protocols to compare the permeability of the bonded dentin with the original smear layer. "
03/01/2008 - "In the groups conditioned with Clearfil SE Bond primer and iBond, which are less acidic than phosphoric acid, tubule openings were occluded or partially occluded, though smear layer removal was observed. "
10/01/2010 - "Both adhesives demonstrated higher microshear bond strengths when enamel was pre-acid-etched with phosphoric acid (Adper Easy Bond 28.7 ± 4.8 MPa; iBond Self-Etch 19.7 ± 3.6 MPa) compared with controls (Adper Easy Bond 19.2 ± 3.3 MPa; iBond Self-Etch 17.5 ± 2.7 MPa) and increased microtensile bond strength when applied on acid-etched (Adper Easy Bond 35.8 ± 5.7 MPa; iBond Self-Etch 24.3 ± 7.9 MPa) vs. smear-layer-covered dentine (Adper Easy Bond 26.9 ± 6.2 MPa; iBond Self-Etch 17.6 ± 4.3 MPa). "

07/01/2008 - "One-hundred and five lesions were randomly assigned to four groups according to adhesive, sclerosis scale and technique: 1) SB applied to lesions with sclerosis scale 1 and 2 (n=26); 2) iBond applied to lesions with sclerosis scale 1 and 2 (n=28); 3) iBond applied to lesions with sclerosis scale 3 and 4 (n=25) and 4) iBond applied with prior acid-etching to lesions with sclerosis scale 3 and 4 (n=26). "

03/31/2021 - "We considered Class II dental cavities in critical tooth areas concerned with vital pulp therapy, and evaluated the marginal gap after treatment with Biodentine and Geristore, and one composite after either etching and adhesive (V2) and after use of a self-etching system (iBond Universal). "

01/01/2014 - "Two different two-component self-etch adhesives (Clearfil SE and Transbond Plus) and two single-component self-etch adhesives (Ideal and iBond) were investigated after using different polymerization procedures (light-emitting diode for 10 or 20 s or plasma arc curing device for 3 or 6 s). "